IXYSTO-247-3RoHS
IXA55I1200HJ
IGBT 1200V 84A 290W TO247
Category
Subcategory
Transistors Igbts Single
Package
TO-247-3
Status
Active
$15.35 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | IXA55I1200HJ |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 290 W |
| Supplier Device Package | ISOPLUS247™ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IXA55I1200HJ by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 190 nC |
| Power - Max | 290 W |
| Test Condition | 600V, 50A, 15Ohm, 15V |
| Switching Energy | 4.5mJ (on), 5.5mJ (off) |
| Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 50A |
| Current - Collector (Ic) (Max) | 84 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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