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Infineon TechnologiesTO-262-3 Long Leads, I²Pak, TO-262AARoHS

IRL5602L

MOSFET P-CH 20V 24A TO262

IRL5602L by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-262-3 Long Leads, I²Pak, TO-262AA

Series

HEXFET®

Status

Obsolete

Datasheet

View Datasheet ↗

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRL5602L
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
Mounting TypeThrough Hole
FET TypeP-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)42mOhm @ 12A, 4.5V
Vgs(th) (Max)1V @ 250µA
Gate Charge (Qg)44 nC @ 4.5 V
Input Capacitance (Ciss)1460 pF @ 15 V
Drive Voltage2.5V, 4.5V
Supplier Device PackageTO-262
RoHSRoHS
Part StatusObsolete

Application & Notes

IRL5602L by Infineon Technologies is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 42mOhm @ 12A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IRL5602L

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Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

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All Technical Specifications

FET TypeP-Channel
Vgs (Max)±8V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1V @ 250µA
Rds On (Max) @ Id, Vgs42mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 4.5 V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1460 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C24A (Tc)

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