IRG4BC10SD-LPBF
IGBT 600V 14A 38W TO262
Transistors Igbts Single
TO-262-3 Long Leads, I²Pak, TO-262AA
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRG4BC10SD-LPBF |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 38 W |
| Supplier Device Package | TO-262 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRG4BC10SD-LPBF by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-262-3 Long Leads, I²Pak, TO-262AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRG4BC10SD-LPBF
Alternatives & Replacements
View All →HGT1S2N120CN
N-CHANNEL IGBT
HGT1S20N36G3VL
N-CHANNEL IGBT
IRGSL4062DPBF
IGBT W/ULTRAFAST SOFT RECOVERY D
IRG4BC40W-LPBF
IRG4BC40 - DISCRETE IGBT WITHOUT
HGT1S14N36G3VLT
N-CHANNEL IGBT
AUIRGSL4062D1
IGBT, 59A I(C), 600V V(BR)CES, N
All Technical Specifications
| Input Type | Standard |
| Gate Charge | 15 nC |
| Power - Max | 38 W |
| Test Condition | 480V, 8A, 100Ohm, 15V |
| Switching Energy | 310µJ (on), 3.28mJ (off) |
| Td (on/off) @ 25°C | 76ns/815ns |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 8A |
| Reverse Recovery Time (trr) | 28 ns |
| Current - Collector (Ic) (Max) | 14 A |
| Current - Collector Pulsed (Icm) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.