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Infineon Technologies18-PowerVQFNRoHS

IRFH7911TR2PBF

MOSFET 2N-CH 30V 13A/28A PQFN

IRFH7911TR2PBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Arrays

Package

18-PowerVQFN

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRFH7911TR2PBF
Package / Case18-PowerVQFN
Mounting TypeSurface Mount
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)8.6mOhm @ 12A, 10V
Vgs(th) (Max)2.35V @ 25µA
Gate Charge (Qg)12nC @ 4.5V
Input Capacitance (Ciss)1060pF @ 15V
Power Dissipation (Max)2.4W, 3.4W
Supplier Device PackagePQFN (5x6)
RoHSRoHS
Part StatusObsolete

Application & Notes

IRFH7911TR2PBF by Infineon Technologies is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 18-PowerVQFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8.6mOhm @ 12A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max2.4W, 3.4W
Vgs(th) (Max) @ Id2.35V @ 25µA
Rds On (Max) @ Id, Vgs8.6mOhm @ 12A, 10V
Gate Charge (Qg) (Max) @ Vgs12nC @ 4.5V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds1060pF @ 15V
Current - Continuous Drain (Id) @ 25°C13A, 28A

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