Infineon Technologies8-PowerVDFNRoHS
IRFH5025TRPBF
MOSFET N-CH 250V 3.8A 8PQFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerVDFN
Series
HEXFET®
Status
Active
Datasheet
$3.28 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRFH5025TRPBF |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 250 V |
| Rds On (Max) | 100mOhm @ 5.7A, 10V |
| Vgs(th) (Max) | 5V @ 150µA |
| Gate Charge (Qg) | 56 nC @ 10 V |
| Input Capacitance (Ciss) | 2150 pF @ 50 V |
| Power Dissipation (Max) | 3.6W (Ta), 8.3W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | 8-PQFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFH5025TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 5.7A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFH5025TRPBF
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 5.7A, 10V |
| Power Dissipation (Max) | 3.6W (Ta), 8.3W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 250 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2150 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
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