IRFH5020TR2PBF
MOSFET N-CH 200V 5.1A 8PQFN
Transistors Fets Mosfets Single
8-PowerVDFN
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IRFH5020TR2PBF |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 55mOhm @ 7.5A, 10V |
| Vgs(th) (Max) | 5V @ 150µA |
| Gate Charge (Qg) | 54 nC @ 10 V |
| Input Capacitance (Ciss) | 2290 pF @ 100 V |
| Supplier Device Package | 8-PQFN (5x6) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IRFH5020TR2PBF by Infineon Technologies is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 55mOhm @ 7.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFH5020TR2PBF
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 150µA |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 7.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2290 pF @ 100 V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
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