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Infineon TechnologiesDirectFET™ Isometric L8RoHS

IRF7799L2TRPBF

MOSFET N-CH 250V 375A DIRECTFET

IRF7799L2TRPBF by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

DirectFET™ Isometric L8

Series

HEXFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIRF7799L2TRPBF
Package / CaseDirectFET™ Isometric L8
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)250 V
Rds On (Max)38mOhm @ 21A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)165 nC @ 10 V
Input Capacitance (Ciss)6714 pF @ 25 V
Power Dissipation (Max)4.3W (Ta), 125W (Tc)
Drive Voltage10V
Supplier Device PackageDirectFET™ Isometric L8
RoHSRoHS
Part StatusObsolete

Application & Notes

IRF7799L2TRPBF by Infineon Technologies is an N-channel power MOSFET rated at 250 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The DirectFET™ Isometric L8 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 38mOhm @ 21A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs38mOhm @ 21A, 10V
Power Dissipation (Max)4.3W (Ta), 125W (Tc)
Gate Charge (Qg) (Max) @ Vgs165 nC @ 10 V
Drain to Source Voltage (Vdss)250 V
Input Capacitance (Ciss) (Max) @ Vds6714 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C35A (Tc)

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