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Infineon Technologies4-PowerTSFNRoHS

IPL65R200CFD7AUMA1

COOLMOS CFD7 SUPERJUNCTION MOSFE

Subcategory

Transistors Fets Mosfets Single

Package

4-PowerTSFN

Series

CoolMOS™

Status

Active

$3.64 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPL65R200CFD7AUMA1
Package / Case4-PowerTSFN
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)200mOhm @ 5.2A, 10V
Vgs(th) (Max)4.5V @ 260µA
Gate Charge (Qg)23 nC @ 10 V
Input Capacitance (Ciss)1044 pF @ 400 V
Power Dissipation (Max)81W (Tc)
Drive Voltage10V
Supplier Device PackagePG-VSON-4
RoHSRoHS
Part StatusActive

Application & Notes

IPL65R200CFD7AUMA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 4-PowerTSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 200mOhm @ 5.2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 260µA
Rds On (Max) @ Id, Vgs200mOhm @ 5.2A, 10V
Power Dissipation (Max)81W (Tc)
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds1044 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C14A (Tc)

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