IMB7AT108
TRANS 2PNP PREBIAS 0.3W SOT457

Transistors Bipolar Bjt Arrays Pre Biased
SOT-457
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Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | IMB7AT108 |
| Package / Case | SOT-457 |
| Mounting Type | Surface Mount |
| Power Dissipation (Max) | 300mW |
| Supplier Device Package | SOT-457 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IMB7AT108 by Rohm Semiconductor is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-457 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IMB7AT108
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All Technical Specifications
| Power - Max | 300mW |
| Transistor Type | 2 PNP - Pre-Biased (Dual) |
| Resistor - Base (R1) | 4.7kOhms |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
| Current - Collector (Ic) (Max) | 100mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
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