IKN01N60RC2ATMA1
HOME APPLIANCES 14 PG-SOT223-3
Transistors Igbts Single
TO-261-4, TO-261AA
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IKN01N60RC2ATMA1 |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 5.1 W |
| Supplier Device Package | PG-SOT223-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IKN01N60RC2ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IKN01N60RC2ATMA1
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All Technical Specifications
| Input Type | Standard |
| Gate Charge | 9 nC |
| Power - Max | 5.1 W |
| Test Condition | 400V, 1A, 49Ohm, 15V |
| Switching Energy | 25.1µJ (on), 13.5µJ (off) |
| Td (on/off) @ 25°C | 5.6ns/80ns |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 1A |
| Reverse Recovery Time (trr) | 59.5 ns |
| Current - Collector (Ic) (Max) | 2.2 A |
| Current - Collector Pulsed (Icm) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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