Infineon Technologies8-PowerSFNRoHS
IGT60R070D1ATMA1
GANFET N-CH 600V 31A 8HSOF
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-PowerSFN
Series
CoolGaN™
Status
Obsolete
Datasheet
$22.33 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | IGT60R070D1ATMA1 |
| Package / Case | 8-PowerSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Vgs(th) (Max) | 1.6V @ 2.6mA |
| Input Capacitance (Ciss) | 380 pF @ 400 V |
| Power Dissipation (Max) | 125W (Tc) |
| Supplier Device Package | PG-HSOF-8-3 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
IGT60R070D1ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerSFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IGT60R070D1ATMA1
Alternatives & Replacements
View All →Alpha & Omega Semiconductor Inc.Stock8-PowerSFN
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Toshiba Semiconductor and StorageStock8-PowerSFN
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DTMOS VI TOLL PD=150W F=1MHZ
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Toshiba Semiconductor and StorageStock8-PowerSFN
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DTMOS VI TOLL PD=190W F=1MHZ
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Infineon TechnologiesStock8-PowerSFN
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | -10V |
| Technology | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 1.6V @ 2.6mA |
| Power Dissipation (Max) | 125W (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 400 V |
| Current - Continuous Drain (Id) @ 25°C | 31A (Tc) |
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