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SemiQModuleRoHS

GSID200A120S5C1

IGBT MODULE 1200V 335A

Subcategory

Transistors Igbts Modules

Package

Module

Status

Active

$186.00 / unit (market reference)

MOQ: 26 pcs

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Parameters

ParameterValue
BrandSemiQ
ModelGSID200A120S5C1
Package / CaseModule
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
Supplier Device PackageModule
RoHSRoHS
Part StatusActive

Application & Notes

GSID200A120S5C1 by SemiQ is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

InputStandard
ConfigurationThree Phase Inverter
NTC ThermistorYes
Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 200A
Current - Collector (Ic) (Max)335 A
Input Capacitance (Cies) @ Vce22.4 nF @ 25 V
Current - Collector Cutoff (Max)1 mA
Voltage - Collector Emitter Breakdown (Max)1200 V

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