GeneSiC SemiconductorTO-258-3, TO-258AARoHS
GA50JT06-258
TRANS SJT 600V 100A TO258
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-258-3, TO-258AA
Status
Active
$693.00 / unit (market reference)
MOQ: 10 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | GA50JT06-258 |
| Package / Case | TO-258-3, TO-258AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 25mOhm @ 50A |
| Power Dissipation (Max) | 769W (Tc) |
| Supplier Device Package | TO-258 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GA50JT06-258 by GeneSiC Semiconductor is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-258-3, TO-258AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 25mOhm @ 50A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 50A |
| Power Dissipation (Max) | 769W (Tc) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
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