GeneSiC SemiconductorTO-263-8, D²Pak (7 Leads + Tab), TO-263CARoHS
GA10SICP12-263
TRANS SJT 1200V 25A D2PAK
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Status
Active
$29.68 / unit (market reference)
MOQ: 500 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | GA10SICP12-263 |
| Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Mounting Type | Surface Mount |
| Operating Temperature | 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Rds On (Max) | 100mOhm @ 10A |
| Input Capacitance (Ciss) | 1403 pF @ 800 V |
| Power Dissipation (Max) | 170W (Tc) |
| Supplier Device Package | TO-263-7 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
GA10SICP12-263 by GeneSiC Semiconductor is an N-channel power MOSFET rated at 1200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-8, D²Pak (7 Leads + Tab), TO-263CA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 100mOhm @ 10A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A |
| Power Dissipation (Max) | 170W (Tc) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1403 pF @ 800 V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
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