GA100JT17-227
TRANS SJT 1700V 160A SOT227
Transistors Fets Mosfets Single
SOT-227-4, miniBLOC
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | GA100JT17-227 |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Rds On (Max) | 10mOhm @ 100A |
| Input Capacitance (Ciss) | 14400 pF @ 800 V |
| Power Dissipation (Max) | 535W (Tc) |
| Supplier Device Package | SOT-227 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GA100JT17-227 by GeneSiC Semiconductor is an N-channel power MOSFET rated at 1700 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10mOhm @ 100A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for GA100JT17-227
Alternatives & Replacements
View All →IXTN200N10L2
MOSFET N-CH 100V 178A SOT227B
G3R20MT12N
SIC MOSFET N-CH 105A SOT227
IXFN66N85X
MOSFET N-CH 850V 65A SOT227B
MSC025SMA120J
SICFET N-CH 1.2KV 77A SOT227
G3R20MT17N
SIC MOSFET N-CH 100A SOT227
IXFN82N60Q3
MOSFET N-CH 600V 66A SOT227B
All Technical Specifications
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 100A |
| Power Dissipation (Max) | 535W (Tc) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 800 V |
| Current - Continuous Drain (Id) @ 25°C | 160A (Tc) |
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