GeneSiC SemiconductorTO-46-3RoHS
GA05JT01-46
TRANS SJT 100V 9A TO46
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-46-3
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | GeneSiC Semiconductor |
| Model | GA05JT01-46 |
| Package / Case | TO-46-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 225°C (TJ) |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 240mOhm @ 5A |
| Power Dissipation (Max) | 20W (Tc) |
| Supplier Device Package | TO-46 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
GA05JT01-46 by GeneSiC Semiconductor is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-46-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 240mOhm @ 5A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Technology | SiC (Silicon Carbide Junction Transistor) |
| Rds On (Max) @ Id, Vgs | 240mOhm @ 5A |
| Power Dissipation (Max) | 20W (Tc) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
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