FS25R12W1T4BOMA1
IGBT MOD 1200V 45A 205W
Transistors Igbts Modules
Module
Active
$37.44 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | FS25R12W1T4BOMA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 205 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FS25R12W1T4BOMA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FS25R12W1T4BOMA1
Alternatives & Replacements
View All →BSM75GB120DLCHOSA1
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BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
All Technical Specifications
| Input | Standard |
| IGBT Type | Trench Field Stop |
| Power - Max | 205 W |
| Configuration | Three Phase Inverter |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 2.25V @ 15V, 25A |
| Current - Collector (Ic) (Max) | 45 A |
| Input Capacitance (Cies) @ Vce | 1.45 nF @ 25 V |
| Current - Collector Cutoff (Max) | 1 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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