FQD20N06LETM
MOSFET N-CH 60V 17.2A DPAK
Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
QFET®
Obsolete
$0.31 / unit (market reference)
MOQ: 962 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FQD20N06LETM |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 60mOhm @ 8.6A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 13 nC @ 5 V |
| Input Capacitance (Ciss) | 665 pF @ 25 V |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Drive Voltage | 5V, 10V |
| Supplier Device Package | TO-252, (D-Pak) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FQD20N06LETM by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 60mOhm @ 8.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FQD20N06LETM
Alternatives & Replacements
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MOSFET N-CH 25V 10A/32A DPAK
FDD8451
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 8.6A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 38W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 665 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Tc) |
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