FPF2G120BF07ASP
IGBT MODULE 650V 40A 156W F2
Transistors Igbts Modules
Module
Obsolete
$94.00 / unit (market reference)
MOQ: 4 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FPF2G120BF07ASP |
| Package / Case | Module |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 156 W |
| Supplier Device Package | F2 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FPF2G120BF07ASP by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FPF2G120BF07ASP
Alternatives & Replacements
View All →BSM75GB120DLCHOSA1
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IGBT MOD 1200V 320A 1100W
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IGBT MOD 1200V 20A 145W
BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
All Technical Specifications
| Input | Standard |
| IGBT Type | Field Stop |
| Power - Max | 156 W |
| Configuration | 3 Independent |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 40A |
| Current - Collector (Ic) (Max) | 40 A |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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