FP50R07N2E4BOSA1
IGBT MODULE 650V 70A
Transistors Igbts Modules
Module
Discontinued at Digi-Key
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | FP50R07N2E4BOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Discontinued at Digi-Key |
Application & Notes
FP50R07N2E4BOSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FP50R07N2E4BOSA1
Alternatives & Replacements
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BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
All Technical Specifications
| Input | Standard |
| IGBT Type | Trench Field Stop |
| Configuration | Three Phase Inverter |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 1.95V @ 15V, 50A |
| Current - Collector (Ic) (Max) | 70 A |
| Input Capacitance (Cies) @ Vce | 3.1 nF @ 25 V |
| Current - Collector Cutoff (Max) | 1 mA |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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