IXYSi4-Pac™-5RoHS
FMM60-02TF
MOSFET 2N-CH 200V 33A I4-PAC
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
i4-Pac™-5
Series
HiPerFET™
Status
Active
$18.28 / unit (market reference)
MOQ: 25 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | FMM60-02TF |
| Package / Case | i4-Pac™-5 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 200V |
| Rds On (Max) | 40mOhm @ 30A, 10V |
| Vgs(th) (Max) | 4.5V @ 250µA |
| Gate Charge (Qg) | 90nC @ 10V |
| Input Capacitance (Ciss) | 3700pF @ 25V |
| Power Dissipation (Max) | 125W |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FMM60-02TF by IXYS is an N-channel power MOSFET rated at 200V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The i4-Pac™-5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 40mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 125W |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 30A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 90nC @ 10V |
| Drain to Source Voltage (Vdss) | 200V |
| Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 33A |
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