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IXYSi4-Pac™-5RoHS

FII24N17AH1S

IGBT H BRIDGE 1700V 18A I4PAK5

Subcategory

Transistors Igbts Arrays

Package

i4-Pac™-5

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandIXYS
ModelFII24N17AH1S
Package / Casei4-Pac™-5
Mounting TypeThrough Hole
Power Dissipation (Max)140 W
Supplier Device PackageISOPLUS i4-PAC™
RoHSRoHS
Part StatusActive

Application & Notes

FII24N17AH1S by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The i4-Pac™-5 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

InputStandard
IGBT TypeNPT
Power - Max140 W
ConfigurationHalf Bridge
NTC ThermistorNo
Vce(on) (Max) @ Vge, Ic6V @ 15V, 16A
Current - Collector (Ic) (Max)18 A
Input Capacitance (Cies) @ Vce2.4 nF @ 25 V
Current - Collector Cutoff (Max)100 µA
Voltage - Collector Emitter Breakdown (Max)1700 V

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