IXYSi4-Pac™-4, IsolatedRoHS
FII24N170AH1
IGBT H BRIDGE 1700V 18A I4PAK5
Category
Subcategory
Transistors Igbts Arrays
Package
i4-Pac™-4, Isolated
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | IXYS |
| Model | FII24N170AH1 |
| Package / Case | i4-Pac™-4, Isolated |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 140 W |
| Supplier Device Package | ISOPLUS i4-PAC™ |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FII24N170AH1 by IXYS is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The i4-Pac™-4, Isolated package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input | Standard |
| IGBT Type | NPT |
| Power - Max | 140 W |
| Configuration | Half Bridge |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 6V @ 15V, 16A |
| Current - Collector (Ic) (Max) | 18 A |
| Input Capacitance (Cies) @ Vce | 2.4 nF @ 25 V |
| Current - Collector Cutoff (Max) | 100 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1700 V |
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