Infineon TechnologiesModuleRoHS
FF3MR12KM1PHOSA1
MEDIUM POWER 62MM
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Module
Series
CoolSiC™
Status
Active
Datasheet
$827.38 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | FF3MR12KM1PHOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 2.83mOhm @ 375A, 15V |
| Vgs(th) (Max) | 5.15V @ 168mA |
| Gate Charge (Qg) | 1000nC @ 15V |
| Input Capacitance (Ciss) | 29800pF @ 25V |
| Supplier Device Package | AG-62MM |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
FF3MR12KM1PHOSA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.83mOhm @ 375A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FF3MR12KM1PHOSA1
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Standard |
| Vgs(th) (Max) @ Id | 5.15V @ 168mA |
| Rds On (Max) @ Id, Vgs | 2.83mOhm @ 375A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 1000nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 29800pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 375A (Tc) |
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