PC
Rochester Electronics, LLC8-PowerVDFNRoHS

FDMS5361L-F085

FDMS5361 - N-CHANNEL POWERTRENCH

FDMS5361L-F085 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

8-PowerVDFN

Series

Automotive, AEC-Q101, PowerTrench®

Status

Active

$0.46 / unit (market reference)

MOQ: 656 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDMS5361L-F085
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)15mOhm @ 16.5A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)44 nC @ 10 V
Input Capacitance (Ciss)1980 pF @ 25 V
Power Dissipation (Max)75W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackagePower56
RoHSRoHS
Part StatusActive

Application & Notes

FDMS5361L-F085 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15mOhm @ 16.5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs15mOhm @ 16.5A, 10V
Power Dissipation (Max)75W (Tc)
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds1980 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C35A (Tc)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.