PC
Rochester Electronics, LLCTO-252-3, DPak (2 Leads + Tab), SC-63RoHS

FDD6680

MOSFET N-CH 30V 12A/46A DPAK

FDD6680 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-252-3, DPak (2 Leads + Tab), SC-63

Series

PowerTrench®

Status

Obsolete

$1.41 / unit (market reference)

MOQ: 213 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDD6680
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)30 V
Rds On (Max)10mOhm @ 12A, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)18 nC @ 5 V
Input Capacitance (Ciss)1230 pF @ 15 V
Power Dissipation (Max)3.3W (Ta), 56W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageTO-252, (D-Pak)
RoHSRoHS
Part StatusObsolete

Application & Notes

FDD6680 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10mOhm @ 12A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs10mOhm @ 12A, 10V
Power Dissipation (Max)3.3W (Ta), 56W (Tc)
Gate Charge (Qg) (Max) @ Vgs18 nC @ 5 V
Drain to Source Voltage (Vdss)30 V
Input Capacitance (Ciss) (Max) @ Vds1230 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C12A (Ta), 46A (Tc)

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