PC
Rochester Electronics, LLCModuleRoHS

FD600R17KE3B2NOSA1

IGBT MODULE 1700V 4300W

FD600R17KE3B2NOSA1 by Rochester Electronics, LLC
Subcategory

Transistors Igbts Modules

Package

Module

Status

Not For New Designs

$992.50 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFD600R17KE3B2NOSA1
Package / CaseModule
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 125°C
Power Dissipation (Max)4300 W
Supplier Device PackageModule
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

FD600R17KE3B2NOSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

InputStandard
Power - Max4300 W
ConfigurationSingle Chopper
NTC ThermistorNo
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 600A
Input Capacitance (Cies) @ Vce54 nF @ 25 V
Current - Collector Cutoff (Max)5 mA
Voltage - Collector Emitter Breakdown (Max)1700 V

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