FD400R33KF2CKNOSA1
IGBT MOD 3300V 660A 4800W
Transistors Igbts Modules
Module
Last Time Buy
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FD400R33KF2CKNOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 125°C |
| Power Dissipation (Max) | 4800 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Last Time Buy |
Application & Notes
FD400R33KF2CKNOSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FD400R33KF2CKNOSA1
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All Technical Specifications
| Input | Standard |
| Power - Max | 4800 W |
| Configuration | Single Chopper |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 4.25V @ 15V, 400A |
| Current - Collector (Ic) (Max) | 660 A |
| Input Capacitance (Cies) @ Vce | 50 nF @ 25 V |
| Current - Collector Cutoff (Max) | 5 mA |
| Voltage - Collector Emitter Breakdown (Max) | 3300 V |
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