FCD5N60_F085 - N-CHANNEL SUPERFE

Transistors Fets Mosfets Single
TO-252-3, DPak (2 Leads + Tab), SC-63
Automotive, AEC-Q101, SuperFET™
Active
$0.69 / unit (market reference)
MOQ: 434 pcs
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| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FCD5N60-F085 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 600 V |
| Rds On (Max) | 1.1Ohm @ 4.6A, 10V |
| Vgs(th) (Max) | 5V @ 250µA |
| Gate Charge (Qg) | 21 nC @ 10 V |
| Input Capacitance (Ciss) | 570 pF @ 25 V |
| Power Dissipation (Max) | 54W (Tj) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-252AA |
| RoHS | RoHS |
| Part Status | Active |
FCD5N60-F085 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-252-3, DPak (2 Leads + Tab), SC-63 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.1Ohm @ 4.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 4.6A, 10V |
| Power Dissipation (Max) | 54W (Tj) |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 600 V |
| Input Capacitance (Ciss) (Max) @ Vds | 570 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.6A (Tc) |
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