EPC2105ENGRT
GANFET 2NCH 80V 9.5A DIE
Transistors Fets Mosfets Arrays
Die
eGaN®
Discontinued at Digi-Key
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | EPC |
| Model | EPC2105ENGRT |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 80V |
| Rds On (Max) | 14.5mOhm @ 20A, 5V |
| Vgs(th) (Max) | 2.5V @ 2.5mA |
| Gate Charge (Qg) | 2.5nC @ 5V |
| Input Capacitance (Ciss) | 300pF @ 40V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Discontinued at Digi-Key |
Application & Notes
EPC2105ENGRT by EPC is an N-channel power MOSFET rated at 80V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 14.5mOhm @ 20A, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for EPC2105ENGRT
Alternatives & Replacements
View All →EPC2106
GANFET TRANS SYM 100V BUMPED DIE
EPC2111
GAN TRANS ASYMMETRICAL HALF BRID
EPC2110
GANFET 2NCH 120V 3.4A DIE
EPC2103
GAN TRANS SYMMETRICAL HALF BRIDG
EPC2105
GAN TRANS ASYMMETRICAL HALF BRID
EPC2102
GAN TRANS SYMMETRICAL HALF BRIDG
All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 2.5mA |
| Rds On (Max) @ Id, Vgs | 14.5mOhm @ 20A, 5V |
| Gate Charge (Qg) (Max) @ Vgs | 2.5nC @ 5V |
| Drain to Source Voltage (Vdss) | 80V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.