Rochester Electronics, LLC8-SMD, Flat LeadRoHS
ECH8305-TL-E
MOSFET P-CH 60V 4A 8ECH
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-SMD, Flat Lead
Status
Obsolete
$0.23 / unit (market reference)
MOQ: 1312 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | ECH8305-TL-E |
| Package / Case | 8-SMD, Flat Lead |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 85mOhm @ 2A, 10V |
| Gate Charge (Qg) | 34 nC @ 10 V |
| Input Capacitance (Ciss) | 1680 pF @ 20 V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Supplier Device Package | 8-ECH |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
ECH8305-TL-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-SMD, Flat Lead package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 85mOhm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ECH8305-TL-E
Alternatives & Replacements
View All →Rochester Electronics, LLCStock8-SMD, Flat Lead
ECH8402-TL-E
MOSFET N-CH 30V 10A 8ECH
Request QuoteRFQ →
onsemiStock8-SMD, Flat Lead
NTHS2101PT1
MOSFET P-CH 8V 5.4A CHIPFET
Request QuoteRFQ →
onsemiStock8-SMD, Flat Lead
NTHD4P02FT1G
MOSFET P-CH 20V 2.2A CHIPFET
Request QuoteRFQ →
onsemiStock8-SMD, Flat Lead
EMH2801-TL-H
MOSFET P-CH 20V 3A 8EMH
Request QuoteRFQ →
onsemiStock8-SMD, Flat Lead
NTHS4501NT1G
MOSFET N-CH 30V 4.9A CHIPFET
Request QuoteRFQ →
onsemiStock8-SMD, Flat Lead
NTHD4N02FT1G
MOSFET N-CH 20V 2.9A CHIPFET
Request QuoteRFQ →
All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2A, 10V |
| Power Dissipation (Max) | 1.6W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 34 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 20 V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.