DMN2005UFG-13
MOSFET N-CH 20V 18.1A PWRDI3333
Transistors Fets Mosfets Single
8-PowerVDFN
Active
$0.62 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN2005UFG-13 |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 4.6mOhm @ 13.5A, 4.5V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 164 nC @ 10 V |
| Input Capacitance (Ciss) | 6495 pF @ 10 V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | PowerDI3333-8 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN2005UFG-13 by Diodes Incorporated is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.6mOhm @ 13.5A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN2005UFG-13
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 13.5A, 4.5V |
| Power Dissipation (Max) | 1.05W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 164 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 6495 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 18.1A (Tc) |
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