DF400R12KE3HOSA1
IGBT MOD 1200V 580A 2000W
Transistors Igbts Modules
Module
Active
$193.16 / unit (market reference)
MOQ: 10 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | DF400R12KE3HOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 125°C |
| Power Dissipation (Max) | 2000 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DF400R12KE3HOSA1 by Infineon Technologies is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DF400R12KE3HOSA1
Alternatives & Replacements
View All →BSM75GB120DLCHOSA1
IGBT MOD 1200V 170A 690W
FP50R06W2E3B11BOMA1
IGBT MODULE 600V 65A 175W
FS15R06XL4BOMA1
IGBT MODULE 600V 20A 81W
FS225R12KE4BOSA1
IGBT MOD 1200V 320A 1100W
F3L15R12W2H3B27BOMA1
IGBT MOD 1200V 20A 145W
BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
All Technical Specifications
| Input | Standard |
| IGBT Type | Trench Field Stop |
| Power - Max | 2000 W |
| Configuration | Single |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 400A |
| Current - Collector (Ic) (Max) | 580 A |
| Input Capacitance (Cies) @ Vce | 28 nF @ 25 V |
| Current - Collector Cutoff (Max) | 5 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.