DF11MR12W1M1B11BPSA1
MOSFET MOD 1200V 50A
Transistors Fets Mosfets Arrays
Module
CoolSiC™+
Active
$137.74 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | DF11MR12W1M1B11BPSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 22.5mOhm @ 50A, 15V |
| Vgs(th) (Max) | 5.55V @ 20mA |
| Gate Charge (Qg) | 124nC @ 15V |
| Input Capacitance (Ciss) | 3680pF @ 800V |
| Power Dissipation (Max) | 20mW |
| Supplier Device Package | AG-EASY1BM-2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DF11MR12W1M1B11BPSA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 22.5mOhm @ 50A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DF11MR12W1M1B11BPSA1
Alternatives & Replacements
View All →FF23MR12W1M1B11BOMA1
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DF23MR12W1M1B11BPSA1
MOSFET MOD 1200V 25A
FF11MR12W1M1B11BOMA1
MOSFET 2N-CH 1200V 100A MODULE
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 20mW |
| Vgs(th) (Max) @ Id | 5.55V @ 20mA |
| Rds On (Max) @ Id, Vgs | 22.5mOhm @ 50A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 124nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 3680pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tj) |
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