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Infineon TechnologiesModuleRoHS

DD1000S33HE3BOSA1

MODULE DIODE HVB130-3

DD1000S33HE3BOSA1 by Infineon Technologies
Subcategory

Diodes Rectifiers Arrays

Package

Module

Status

Active

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelDD1000S33HE3BOSA1
Package / CaseModule
Mounting TypeChassis Mount
Supplier Device PackageAG-IHVB130-3
RoHSRoHS
Part StatusActive

Application & Notes

DD1000S33HE3BOSA1 by Infineon Technologies is a commonly used electronic component in the Diodes Rectifiers Arrays category. Available in Module package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.

All Technical Specifications

SpeedStandard Recovery >500ns, > 200mA (Io)
Diode TypeStandard
Diode Configuration2 Independent
Current - Reverse Leakage @ Vr1000 A @ 1800 V
Voltage - DC Reverse (Vr) (Max)3300 V
Operating Temperature - Junction-40°C ~ 150°C
Voltage - Forward (Vf) (Max) @ If3.85 V @ 1000 A
Current - Average Rectified (Io) (per Diode)1000A (DC)

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