Central Semiconductor CorpDieRoHS
CP398X-CPDM303NH-WN
MOSFET N-CH 30V 3.6A DIE
Category
Subcategory
Transistors Fets Mosfets Single
Package
Die
Status
Active
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Central Semiconductor Corp |
| Model | CP398X-CPDM303NH-WN |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 78mOhm @ 1.8A, 2.5V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 13 nC @ 4.5 V |
| Input Capacitance (Ciss) | 590 pF @ 10 V |
| Drive Voltage | 2.5V, 4.5V |
| Supplier Device Package | Die |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CP398X-CPDM303NH-WN by Central Semiconductor Corp is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Die package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 78mOhm @ 1.8A, 2.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | 12V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 78mOhm @ 1.8A, 2.5V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 590 pF @ 10 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
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