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Wolfspeed, Inc.ModuleRoHS

CAB530M12BM3

1200V, 530A H-BRIDGE SIC MODULE

Subcategory

Transistors Fets Mosfets Arrays

Package

Module

Status

Active

$712.08 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandWolfspeed, Inc.
ModelCAB530M12BM3
Package / CaseModule
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET Type2 N-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Rds On (Max)3.55mOhm @ 530A, 15V
Vgs(th) (Max)3.6V @ 140mA
Gate Charge (Qg)1362nC @ 4V
Input Capacitance (Ciss)39.6nF @ 800V
Supplier Device PackageModule
RoHSRoHS
Part StatusActive

Application & Notes

CAB530M12BM3 by Wolfspeed, Inc. is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.55mOhm @ 530A, 15V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel
FET FeatureSilicon Carbide (SiC)
Vgs(th) (Max) @ Id3.6V @ 140mA
Rds On (Max) @ Id, Vgs3.55mOhm @ 530A, 15V
Gate Charge (Qg) (Max) @ Vgs1362nC @ 4V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds39.6nF @ 800V
Current - Continuous Drain (Id) @ 25°C530A

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