BUK6C2R1-55C,118
NEXPERIA BUK6C2R1-55C - 228A, 55
Transistors Fets Mosfets Single
TO-263-7, D²Pak (6 Leads + Tab)
Automotive, AEC-Q101, TrenchMOS™
Active
Price available on request
MOQ: 241 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | BUK6C2R1-55C,118 |
| Package / Case | TO-263-7, D²Pak (6 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 2.3mOhm @ 90A, 10V |
| Vgs(th) (Max) | 2.8V @ 1mA |
| Gate Charge (Qg) | 253 nC @ 10 V |
| Input Capacitance (Ciss) | 16000 pF @ 25 V |
| Power Dissipation (Max) | 300W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | D2PAK-7 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BUK6C2R1-55C,118 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.3mOhm @ 90A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BUK6C2R1-55C,118
Alternatives & Replacements
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BUK7C10-75AITE,118
NEXPERIA BUK7C10-75 - 75A, 75V,
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NP161N04TUG-E1-AY
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FDB016N04AL7
MOSFET N-CH 40V 160A TO263-7
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 90A, 10V |
| Power Dissipation (Max) | 300W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 253 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 16000 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 228A (Tc) |
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