BSM080D12P2C008
SIC POWER MODULE-1200V-80A
Transistors Fets Mosfets Arrays
Module
Active
$319.84 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rohm Semiconductor |
| Model | BSM080D12P2C008 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Vgs(th) (Max) | 4V @ 13.2mA |
| Input Capacitance (Ciss) | 800pF @ 10V |
| Power Dissipation (Max) | 600W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
BSM080D12P2C008 by Rohm Semiconductor is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max -. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSM080D12P2C008
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 600W |
| Vgs(th) (Max) @ Id | 4V @ 13.2mA |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
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