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Infineon Technologies6-VSSOP, SC-88, SOT-363RoHS

BSD840NH6327XTSA1

MOSFET 2N-CH 20V 0.88A SOT363

BSD840NH6327XTSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Arrays

Package

6-VSSOP, SC-88, SOT-363

Series

OptiMOS™

Status

Active

$0.52 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandInfineon Technologies
ModelBSD840NH6327XTSA1
Package / Case6-VSSOP, SC-88, SOT-363
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)20V
Rds On (Max)400mOhm @ 880mA, 2.5V
Vgs(th) (Max)750mV @ 1.6µA
Gate Charge (Qg)0.26nC @ 2.5V
Input Capacitance (Ciss)78pF @ 10V
Power Dissipation (Max)500mW
Supplier Device PackagePG-SOT363-6
RoHSRoHS
Part StatusActive

Application & Notes

BSD840NH6327XTSA1 by Infineon Technologies is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-VSSOP, SC-88, SOT-363 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 400mOhm @ 880mA, 2.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureLogic Level Gate
Power - Max500mW
Vgs(th) (Max) @ Id750mV @ 1.6µA
Rds On (Max) @ Id, Vgs400mOhm @ 880mA, 2.5V
Gate Charge (Qg) (Max) @ Vgs0.26nC @ 2.5V
Drain to Source Voltage (Vdss)20V
Input Capacitance (Ciss) (Max) @ Vds78pF @ 10V
Current - Continuous Drain (Id) @ 25°C880mA

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