BSC042N03ST
MOSFET N-CH 30V 20A/50A TDSON
Transistors Fets Mosfets Single
8-PowerTDFN
OptiMOS™
Discontinued at Digi-Key
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | BSC042N03ST |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 4.2mOhm @ 50A, 10V |
| Vgs(th) (Max) | 2V @ 50µA |
| Gate Charge (Qg) | 28 nC @ 5 V |
| Input Capacitance (Ciss) | 3660 pF @ 15 V |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | PG-TDSON-8-5 |
| RoHS | RoHS |
| Part Status | Discontinued at Digi-Key |
Application & Notes
BSC042N03ST by Infineon Technologies is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerTDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.2mOhm @ 50A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for BSC042N03ST
Alternatives & Replacements
View All →FDMS8025S
MOSFET N-CH 30V 24A/49A 8PQFN
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FDMS0352S
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CSD17307Q5A
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FDMS0349
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CSD17555Q5A
MOSFET N-CH 30V 24A/100A 8VSON
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Rds On (Max) @ Id, Vgs | 4.2mOhm @ 50A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3660 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 50A (Tc) |
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