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Vishay SiliconixTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)RoHS

BS250KL-TR1-E3

MOSFET P-CH 60V 270MA TO92-18RM

BS250KL-TR1-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelBS250KL-TR1-E3
Package / CaseTO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeP-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)6Ohm @ 500mA, 10V
Vgs(th) (Max)3V @ 250µA
Gate Charge (Qg)3 nC @ 15 V
Power Dissipation (Max)800mW (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageTO-92-18RM
RoHSRoHS
Part StatusObsolete

Application & Notes

BS250KL-TR1-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeP-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA
Rds On (Max) @ Id, Vgs6Ohm @ 500mA, 10V
Power Dissipation (Max)800mW (Ta)
Gate Charge (Qg) (Max) @ Vgs3 nC @ 15 V
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C270mA (Ta)

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