Microchip TechnologyTO-247-3 VariantRoHS
APT65GP60B2G
IGBT 600V 100A 833W TMAX
Category
Subcategory
Transistors Igbts Single
Package
TO-247-3 Variant
Series
POWER MOS 7®
Status
Active
$17.45 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Microchip Technology |
| Model | APT65GP60B2G |
| Package / Case | TO-247-3 Variant |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 833 W |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
APT65GP60B2G by Microchip Technology is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 Variant package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| IGBT Type | PT |
| Input Type | Standard |
| Gate Charge | 210 nC |
| Power - Max | 833 W |
| Test Condition | 400V, 65A, 5Ohm, 15V |
| Switching Energy | 605µJ (on), 896µJ (off) |
| Td (on/off) @ 25°C | 30ns/91ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 65A |
| Current - Collector (Ic) (Max) | 100 A |
| Current - Collector Pulsed (Icm) | 250 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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