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Alpha & Omega Semiconductor Inc.3-PowerSMD, Flat LeadsRoHS

AOUS66616

MOSFET N-CH 60V 33A/92A ULTRASO8

Subcategory

Transistors Fets Mosfets Single

Package

3-PowerSMD, Flat Leads

Series

AlphaSGT™

Status

Active

$0.77 / unit (market reference)

MOQ: 3000 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAOUS66616
Package / Case3-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)3.3mOhm @ 20A, 10V
Vgs(th) (Max)3.4V @ 250µA
Gate Charge (Qg)60 nC @ 10 V
Input Capacitance (Ciss)2870 pF @ 30 V
Power Dissipation (Max)6.2W (Ta), 92.5W (Tc)
Drive Voltage6V, 10V
Supplier Device PackageUltraSO-8™
RoHSRoHS
Part StatusActive

Application & Notes

AOUS66616 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-PowerSMD, Flat Leads package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.3mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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AOUS66414Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V 40A/92A ULTRASO8

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.4V @ 250µA
Rds On (Max) @ Id, Vgs3.3mOhm @ 20A, 10V
Power Dissipation (Max)6.2W (Ta), 92.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs60 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds2870 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Current - Continuous Drain (Id) @ 25°C33A (Ta), 92A (Tc)

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