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Alpha & Omega Semiconductor Inc.TO-251-3 Short Leads, IPak, TO-251AARoHS

AOU4N60

MOSFET N-CH 600V 4A TO251-3

Subcategory

Transistors Fets Mosfets Single

Package

TO-251-3 Short Leads, IPak, TO-251AA

Status

Not For New Designs

$1.05 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAOU4N60
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-50°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)2.3Ohm @ 2A, 10V
Vgs(th) (Max)4.5V @ 250µA
Gate Charge (Qg)14.5 nC @ 10 V
Input Capacitance (Ciss)640 pF @ 25 V
Power Dissipation (Max)104W (Tc)
Drive Voltage10V
Supplier Device PackageTO-251-3
RoHSRoHS
Part StatusNot For New Designs

Application & Notes

AOU4N60 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-251-3 Short Leads, IPak, TO-251AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 2.3Ohm @ 2A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.5V @ 250µA
Rds On (Max) @ Id, Vgs2.3Ohm @ 2A, 10V
Power Dissipation (Max)104W (Tc)
Gate Charge (Qg) (Max) @ Vgs14.5 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds640 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C4A (Tc)

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