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Alpha & Omega Semiconductor Inc.8-WDFN Exposed PadRoHS

AON7934_101

MOSFET

Subcategory

Transistors Fets Mosfets Arrays

Package

8-WDFN Exposed Pad

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAON7934_101
Package / Case8-WDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)30V
Rds On (Max)10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Vgs(th) (Max)2.2V @ 250µA
Gate Charge (Qg)11nC @ 10V, 17.5nC @ 10V
Input Capacitance (Ciss)485pF @ 15V, 807pF @ 15V
Power Dissipation (Max)2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Supplier Device Package8-DFN-EP (3x3)
RoHSRoHS
Part StatusObsolete

Application & Notes

AON7934_101 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max2.5W (Ta), 23W (Tc), 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id2.2V @ 250µA
Rds On (Max) @ Id, Vgs10.2mOhm @ 13A, 10V, 7.7mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V, 17.5nC @ 10V
Drain to Source Voltage (Vdss)30V
Input Capacitance (Ciss) (Max) @ Vds485pF @ 15V, 807pF @ 15V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 16A (Tc), 15A (Ta), 18A (Tc)

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