Alpha & Omega Semiconductor Inc.8-WDFN Exposed PadRoHS
AON7932_101
MOSFET 2N-CH 30V 6.6A/8.1A 8DFN
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-WDFN Exposed Pad
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AON7932_101 |
| Package / Case | 8-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 20mOhm @ 6.6A, 10V |
| Vgs(th) (Max) | 2.4V @ 250µA |
| Gate Charge (Qg) | 6.5nC @ 10V |
| Input Capacitance (Ciss) | 460pF @ 15V |
| Power Dissipation (Max) | 1.4W |
| Supplier Device Package | 8-DFN-EP (3x3) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
AON7932_101 by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 6.6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.4W |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 460pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A, 8.1A |
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