Alpha & Omega Semiconductor Inc.8-PowerVDFNRoHS
AON6912A
MOSFET 2N-CH 30V 10A/13.8A 8DFN
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
8-PowerVDFN
Status
Active
$0.44 / unit (market reference)
MOQ: 3000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Alpha & Omega Semiconductor Inc. |
| Model | AON6912A |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 13.7mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 17nC @ 10V |
| Input Capacitance (Ciss) | 910pF @ 15V |
| Power Dissipation (Max) | 1.9W, 2.1W |
| Supplier Device Package | 8-DFN (5x6) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
AON6912A by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerVDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 13.7mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | Logic Level Gate |
| Power - Max | 1.9W, 2.1W |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 13.7mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 910pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 10A, 13.8A |
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