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Alpha & Omega Semiconductor Inc.TO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

AOB482L

MOSFET N-CH 80V 11A/105A TO263

Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

SDMOS™

Status

Obsolete

$1.51 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandAlpha & Omega Semiconductor Inc.
ModelAOB482L
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)80 V
Rds On (Max)6.9mOhm @ 20A, 10V
Vgs(th) (Max)3.7V @ 250µA
Gate Charge (Qg)81 nC @ 10 V
Input Capacitance (Ciss)4870 pF @ 40 V
Power Dissipation (Max)2.1W (Ta), 333W (Tc)
Drive Voltage7V, 10V
Supplier Device PackageTO-263 (D2Pak)
RoHSRoHS
Part StatusObsolete

Application & Notes

AOB482L by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 80 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6.9mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.7V @ 250µA
Rds On (Max) @ Id, Vgs6.9mOhm @ 20A, 10V
Power Dissipation (Max)2.1W (Ta), 333W (Tc)
Gate Charge (Qg) (Max) @ Vgs81 nC @ 10 V
Drain to Source Voltage (Vdss)80 V
Input Capacitance (Ciss) (Max) @ Vds4870 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Current - Continuous Drain (Id) @ 25°C11A (Ta), 105A (Tc)

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