Alpha & Omega Semiconductor Inc.TO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

AOB286L

MOSFET N-CH 80V 13A/70A TO263

Parameters

Parameter	Value
Brand	Alpha & Omega Semiconductor Inc.
Model	AOB286L
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	80 V
Rds On (Max)	5.7mOhm @ 20A, 10V
Vgs(th) (Max)	3.3V @ 250µA
Gate Charge (Qg)	63 nC @ 10 V
Input Capacitance (Ciss)	3142 pF @ 40 V
Power Dissipation (Max)	2.1W (Ta), 167W (Tc)
Drive Voltage	6V, 10V
Supplier Device Package	TO-263 (D2Pak)
RoHS	RoHS
Part Status	Active

Application & Notes

AOB286L by Alpha & Omega Semiconductor Inc. is an N-channel power MOSFET rated at 80 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5.7mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3.3V @ 250µA
Rds On (Max) @ Id, Vgs	5.7mOhm @ 20A, 10V
Power Dissipation (Max)	2.1W (Ta), 167W (Tc)
Gate Charge (Qg) (Max) @ Vgs	63 nC @ 10 V
Drain to Source Voltage (Vdss)	80 V
Input Capacitance (Ciss) (Max) @ Vds	3142 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Current - Continuous Drain (Id) @ 25°C	13A (Ta), 70A (Tc)

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